View RF5112_8368784.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 of 19 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information rf mems ldmos rf in rf in nc nc nc nc vreg1 vreg2 pdetect rf out vcc nc vc1 nc rf out rfout/ vc2 16 15 14 13 5 6 7 8 9 10 11 12 4 3 2 1 input match bias 2nd inter- stage match 1st RF5112 3v to 5v, 2.4ghz to 2.5ghz linear power amplifier the RF5112 is a linear, medium-power, high-efficiency, two-stage amplifier ic designed specifically for battery-powered wifi applications such as pc cards, mini pci, and compact flash applications. the device is manufactured on an advanced ingap gallium arsenide heterojunction bi polar transistor (hbt) process, and has been designed for use as the final rf am plifier in 2.5ghz ofdm and other spread- spectrum transmitters. the device is provided in a 3mmx3mmx0.9mm, 16-pin, qfn with a backside ground. the RF5112 is designed to maintain linearity over a wide range of supply voltage and power output. features ? single power supply 3.0v to 5.0v ? +23dbm, <4%evm, 250ma at v cc =5.0v ? +21dbm, <4.0%evm, 185ma atv cc =3.3v ? 28db typical small signal gain ? 50 ? input and interstage match- ing ? 2400mhz to 2500mhz fre- quency range applications ? ieee802.11b/g/n wifi applica- tions ? 2.5ghz ism band applications ? commercial and consumer sys- tems ? portable battery-powered equip- ment ? spread-spectrum and mmds systems RF5112 standard 25 piece bag RF5112sr standard 100 piece reel RF5112tr7 standard 2500 piece reel RF5112wl50pck-41xfully assembled evaluation board kit (5.0v tune) RF5112wl33pck-41xfully assembled evaluation board kit (3.3v tune) ds110617 ? package style: qfn, 16-pin, 3mmx3mmx0.9mm
2 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit supply voltage 6.0 v power control voltage (v reg )3.3v dc supply current 500 ma input rf power +10 dbm operating ambient temperature -40 to +85 c storage temperature -40 to +150 c moisture sensitivity msl2 parameter specification unit condition min. typ. max. compliance ieee802.11b/g ieee802.11n** typical conditions temp=25c, v reg 1 and 2=2.85v, freq=2.4ghz to 2.5ghz, duty cycle=1 to 100% unless otherwise noted. frequency 2.40 2.5 ghz output power tbd 21 dbm v cc =3.3v, v reg =2.85v, 54mbps, ofdm mod- ulation evm 3.3 4.0 % v cc =3.3v, p out =21dbm adjacent channel power acp1 -34 -30 dbc v cc =3.3v, v reg =2.85v, p out =23.5dbm mea- sured with the standard ieee802.11b wave form at 1 mbps. acp2 -54 -50 dbc v cc =3.3v, v reg =2.85v, p out =23.5dbm mea- sured with the standard ieee802.11b wave form at 1 mbps. output power tbd 23 dbm v cc =5v, v reg =2.85v, 54mbps, ofdm modu- lation evm 3.3 4.0 % p out =23dbm, rms, mean adjacent channel power acp1 -34 -30 dbc v cc =5.0v, v reg =2.85v, p out =23.5dbm mea- sured with the standard ieee802.11b wave form at 1 mbps. acp2 -54 -50 dbc v cc =5.0v, v reg =2.85v, p out =23.5dbm mea- sured with the standard ieee802.11b wave form at 1 mbps. harmonics 2f 0 -17 tbd dbm/mhz measured at v cc =3.3v, v reg =2.85v at p out =23dbm with 11b waveform at 1mbps 3f 0 -35 tbd dbm/mhz measured at v cc =3.3v, v reg =2.85v at p out =23dbm with 11b waveform at 1mbps harmonics 2f 0 -7 tbd dbm/mhz measured at v cc =5.0v, v reg =2.85v at p out =25dbm with 11b waveform at 1mbps 3f 0 -47 tbd dbm/mhz measured at v cc =5.0v, v reg =2.85v at p out =25dbm with 11b waveform at 1mbps caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. input return loss -10 db gain 27.5 29 tbd db at both v cc =3.3v and 5.0v gain variance 0.75 db -40c to +85c power detector (p_detect) 0.1 1.3 v for p out =0dbm to 23dbm with v cc =3.3v, 11 b 0.1 2.5 v for p out =0dbm to 25dbm with v cc =5.0v, 11 b current operating 185 tbd ma v cc =3.3v, p out =+21dbm 250 tbd ma v cc =5.0v, p out =23dbm quiescent 95 tbd ma rf=off, v cc =3.3v tbd tbd ma rf=off, v cc =5.0v i reg 10 ma shutdown 10 ? a current operating 100 tbd ma at +18dbm rf p out and 54mbps datarate at <2% evm rms, mean quiescent 75 ma at +18dbm rf p out and 54mbps datarate at <2% evm rms, mean i reg 10 ma at +18dbm rf p out and 54mbps datarate at <2% evm rms, mean shutdown 10 ? a at +18dbm rf p out and 54mbps datarate at <2% evm rms, mean power supply 3.0 3.3 5 v dc operating v reg1 , v reg2 input voltage 2.75 2.85 3.0 v dc operating v reg1 , v reg2 current 510mav cc =+3.3v dc 510mav cc =+5.0v dc output vswr 10:1 input return loss -15 -10 db turn-on time* .5 1.0 usec output stable to within 90% of final gain
4 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pin function description interface schematic 1nc not connected. may be connected to ground (gnd). 2rf in rf input. see evaluation board schematic for details. 3rf in rf input. see evaluation board schematic for details. see pin 2. 4nc not connected. may be connected to ground (gnd). 5nc do not connect. note: vcc voltage may be applied to this pin without damage to, or affect- ing the performance of, the RF5112. 6vreg1 bias current control voltage for the first stage. 7vreg2 bias current control voltage for the second stage. the vreg2 pin may be connected to vreg1 through an external resistor bridge. 8pdetect (or n/c*) provides an output voltage proportional to the output rf level. *in applications where the pdetect function is not desired, this pin may be left unconnected. 9nc no-connect. 10 rf out rf output. 11 rf out same as pin 10. see pin 10. 12 vcc2 power supply for second stage amplifier. connect as shown on evaluation board schematic. 13 nc not connected. may be connected to ground (gnd). 14 vcc1 power supply for first stage amplifier. connect as shown on evaluation board schematic. 15 nc not connected. may be connected to ground (gnd). 16 vcc b supply voltage for the bias reference and control circuits. may be con- nected with vc1 and vc2 (single-supply voltage). pkg base gnd the center metal base of the qfn package provides dc and rf ground as well as heat sink for the amplifier. input match vcc interstage match rf out bias
5 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . package drawing pin out shaded lead is pin 1. dimensions in mm. 0.90 0.85 0.05 c 0.05 0.00 0.70 0.65 12 max -c- seating plane 0.60 0.24 typ 0.50 0.30 pin 1 id r.20 0.10 c ab m 0.30 0.18 0.50 1.65 1.35 sq. 1.50 typ 0.10 c a 2 plcs -a- 3.00 0.10 c b 2 plcs 1.37 typ 0.10 c a 2 plcs 2.75 sq 0.10 c b 2 plcs 3.00 -b- rf in rf in nc nc nc nc vreg1 vreg2 pdetect rf out vcc b vcc1 nc rf out vcc2 16 15 14 13 5 6 7 8 9 10 11 12 4 3 2 1 nc
6 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . theory of operation and application information the RF5112 is a two-stage power amplifier designed primarily fo r ieee802.11g/n wifi applications where the available supply voltage and current are limited. this pa has a minimum gain of 28db (29.5db typical) in the 2.4ghz to 2.5ghz ism band. the RF5112 has an integrated input and interstage match to 50 ? . only the output stage requires matching. this amplifier will operate to and below the lowest expected voltage made available by a typical cardbus or pcmcia card slot in a laptop personal computer. the RF5112 operates from a single supply voltage of 3.0v to 5. 0v to deliver specified performance. power control is provided through two control pins (v reg1 and v reg2 ). for the best performance and lower current, there is a 68 ? resistor (not required at 5v operation) placed in series with v reg2 control line. if customer desires, v reg1 and v reg2 can be connected together prior to the series resistor on v reg2 (see applications schematic for details). the output match of the RF5112 provides flexibility to opti mize performance on the customer board using minimum compo- nent count and the lowest cost bill of materials (bom). the ou tput match topology follows that of a low pass network and it incorporates a series capacitor as the last component which can also serve as a dc block. depending on the voltage of opera- tion, the output match will require either on e or two shunt capacitors to optimize the return loss and bandwidth. in the case o f a 3.3v operation, only one capacitor is required while the 5v op eration requires two. the value of the shunt tuning capacitor i n the 3.3v case is 2.2pf and its placement is approximately 112mils from the package rf output pin. this location is marked with the reference designator c10 on the evaluation board. for th e 5v operation, the first tuning capacitor value is 1.5pf and its placement approximately 90mils from the package (referen ce designator c10). the second tuning cap value for the 5v operation is 1pf and its placement is approximately 200mils from the package (c11 reference designator). dc bias for the last stage is provided through an rf choke connected directly at the node between the transistor's collector and output match. this inductor plays a small role on the output match performanc e so its value must be carefully chosen as to not detune the circuit or lower its q. rfmd recommends to use a high-q inductor with a range in value between 5.6nh to 7.5nh. pcb layout and material will affect optimum value and placemen t for these tuning capacitors. for fastest implementation and best results when designing with the rf 5112, rfmd recommends that the evaluation board be copied as close as possible in particular the grounds and distance of comp onents from the package pins (refer to sc hematic for additional details). the initia l pcb layout should include exposed ground area near the shunt tuning capacitors to allow fine tuning of the output match. smith chart-based design tools may be used to assist in dete rmining the desired capacitor valu e and transmission line physi- cal characteristics. note that the use of a single capacitor ou tput circuit match results in a more sensitive match and slightl y reduced RF5112 bandwidth. in this conf iguration, the RF5112 will exhibit sufficient output spectrum bandwidth to meet ieee802.11b/g requirements when matched properly. upon request, rfmd can provide gerber files for the evaluation board and bom. high-q tuning components are not required in every RF5112 based design. however, it is a good practice and hi ghly recommended to start the in itial tune with high-q compo- nents then substitute with standard parts and compare against the initial performance. rfmd experience indicates that yield improvements offset the cost difference between "high-q" and "low-q" components. the RF5112 had been primarily characterized with a v reg voltage of 2.85v. however, the RF5112 will operate from a wide range of bias control voltages and within a wide range of frequencies (typically 1800mhz to 2800mhz). if a bias control volt- age other than 2.85v is preferred or if a different frequency ra nge (other than 2.4ghz to 2.5ghz) is desired, please contact rfmd sales or applications engineering for assistance.
7 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . evaluation board schematic - 5v 50 ??? strip j1 rf in c2 1 nf c3 1 nf c9 330 pf r2 0 ? vreg1 and 2 pdetect c10 dnp* l2 6.8 nh coilcraft l1 7.5 nh c6 1 ? f c7 1 ? f c1 1 nf vcc gnd p2-1 pdetect p2-3 vreg2 p2-4 vreg1 p2 1 2 3 4 hdr_1x4 p4 1 gnd 50 ??? strip j2 rf out c12 10 pf 16 15 14 13 5 6 7 8 9 10 11 12 4 3 2 1 1 notes: 1. pins 1, 4, 13, and 15 may be left as no connect. *dnp=do not place 2. c2 and c3 bypass caps can be removed if vreg1 and vreg2 are supplied with clean voltages. 1 1 1 p3 1 p3-1 vcc p1 1 2 c8 4.7 ? f c13 1.5 pf tl tl = 200 mils (50 ? ) from ic (or 55 mils from center of c13 pad to center of c11 pad) tl tl = 90 mils (50 ? ) from ic (measured to the center of c10 pad) gnd vcc p1-1 5125400, r.- r5 18 ? tl c11 1.0 pf r6 0 ? r4 2.7 k ?
8 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . evaluation board schematic - 3.3v 50 ??? strip j1 rf in c2 1 nf c3 1 nf c9 330 pf r2 68 ? vreg1 and 2 pdetect c10 2.7 pf l2 6.8 nh coilcraft l1 7.5 nh c6 1 ? f c7 1 ? f c1 1 nf vcc gnd p2-1 pdetect p2-3 vreg2 p2-4 vreg1 p2 1 2 3 4 hdr_1x4 p4 1 gnd 50 ??? strip j2 rf out c12 10 pf 16 15 14 13 5 6 7 8 9 10 11 12 4 3 2 1 1 notes: 1. pins 1, 4, 13, and 15 may be left as no connect. 2. c2 and c3 bypass caps can be removed if vreg1 and vreg2 are supplied with clean voltages. *dnp=do not place 1 1 1 p3 1 p3-1 vcc p1 1 2 c8 4.7 ? f c11 dnp tl tl tl = 112 mils (50 ? ) from ic (measured to center of c10 pad) gnd vcc p1-1 5125400, r.- r5 10 ? r4 1.8k ?
9 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . 5.0v evaluation board layout board size 2.0? x 2.0? board thickness 0.031?, board material fr-4, multi-layer
10 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . 3.3v evaluation board layout board size 2.0? x 2.0? board thickness 0.031?, board material fr-4, multi-layer
11 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . 5v operation typical performance evm versus output power over frequency v cc =5.0v, ofdm 54mbps, 50% duty cycle, temp=25c 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 output power (dbm) evm (%) 2400 mhz 2450 mhz 2500 mhz gain versus output power over frequency v cc =5.0v, ofdm 54mbps, 50% duty cycle, temp=25c 26.0 28.0 30.0 32.0 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 output power (dbm) gain (db) 2400 mhz 2450 mhz 2500 mhz i cc versus output power over frequency v cc =5.0v, ofdm 54mbps, 50% duty cycle, temp=25c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.00 3.00 6.00 9.00 12.00 15.00 18.00 21.00 24.00 27.00 output power (dbm) i cc (a) 2400 mhz 2450 mhz 2500 mhz p detect versus output power over frequency v cc =5.0v, ofdm 54mbps, 50% duty cycle, temp=25c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 output power (dbm) p detect (v) 2400 mhz 2450 mhz 2500 mhz
12 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . 5v operation typical performance acp2 (lower) versus output power over frequency v cc =5.0v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 p out (dbm) acp2l (dbc) 2400mhz 2450mhz 2500mhz acp1 (lower) versus output power over frequency v cc =5.0v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 p out (dbm) acp1l (dbc) 2400mhz 2450mhz 2500mhz acp1 (upper) versus output power over frequency v cc =5.0v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 p out (dbm) acp1u (dbc) 2400mhz 2450mhz 2500mhz acp2 (upper) versus output power over frequency v cc =5.0v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 p out (dbm) acp2u (dbc) 2400mhz 2450mhz 2500mhz
13 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . 5v operation typical performance h2(dbm) versus output power over frequency v cc =5.0v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 p out (dbm) h2 (dbm) 2400mhz 2450mhz 2500mhz h3(dbm) versus output power over frequency v cc =5.0v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 p out (dbm) h3 (dbm) 2400mhz 2450mhz 2500mhz
14 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . 3.3v operation typical performance evm versus output power over frequency v cc =3.3v, ofdm 54mbps, 50% duty cycle, temp=25c 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 output power (dbm) evm (%) 2400 mhz 2450 mhz 2500 mhz gain versus output power over frequency v cc =3.3v, ofdm 54mbps, 50% duty cycle, temp=25c 24.0 26.0 28.0 30.0 32.0 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 output power (dbm) gain (db) 2400 mhz 2450 mhz 2500 mhz i cc versus output power over frequency v cc =3.3v, ofdm 54mbps, 50% duty cycle, temp=25c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.00 3.00 6.00 9.00 12.00 15.00 18.00 21.00 24.00 27.00 output power (dbm) i cc (a) 2400 mhz 2450 mhz 2500 mhz p detect versus output power over frequency v cc =3.3v, ofdm 54mbps, 50% duty cycle, temp=25c 0.0 0.5 1.0 1.5 2.0 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 output power (dbm) p detect (v) 2400 mhz 2450 mhz 2500 mhz
15 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . 3.3v operation typical performance acp1 (lower) versus output power over frequency v cc =3.3v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 output power (dbm) acp1l (dbc) 2400mhz 2450mhz 2500mhz acp1 (upper) versus output power over frequency v cc =3.3v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 output power (dbm) acp1u (dbc) 2400mhz 2450mhz 2500mhz acp2 (lower) versus output power over frequency v cc =3.3v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 p out (dbm) acp2l (dbc) 2400mhz 2450mhz 2500mhz acp2 (upper) versus output power over frequency v cc =3.3v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 output power (dbm) acp2u (dbc) 2400mhz 2450mhz 2500mhz
16 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . 3.3v operation typical performance h2(dbm) versus output power over frequency v cc =3.3v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 p out (dbm) h2 (dbm) 2400mhz 2450mhz 2500mhz h3(dbm) versus output power over frequency v cc =3.3v, dsss 1mbps, 100% duty cycle, temp=25c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1 4 7 10 13 16 19 22 25 28 p out (dbm) h3 (dbm) 2400mhz 2450mhz 2500mhz
17 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb design requirements pcb surface finish the pcb surface finish used for rfmd's qualification process is electroless nickel, immersion gold. typical thickness is 3 ? inch to 8 ? inch gold over 180 ? inch nickel. pcb land pattern recommendation pcb land patterns for rfmd components are based on ipc-735 1 standards and rfmd empirica l data. the pad pattern shown has been developed and tested for optimized assembly at rf md. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes vary from company to company, careful process development is recommended. pcb metal land pattern a = 0.64 x 0.28 (mm) typ. b = 0.28 x 0.64 (mm) typ. c = 1.50 (mm) sq. b b b b a a a a b b b b a a a a c pin 16 pin 1 pin 12 pin 8 dimensions in mm. 0.50 typ. 1.50 typ. 0.50 typ. 0.55 typ. 0.55 typ. 0.75 typ. 0.75 typ. 1.50 typ. figure 1. pcb metal land pattern (top view)
18 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb solder mask pattern liquid photo-imageable (lpi) so lder mask is recommended. the solder mask footprint will match what is shown for the pcb metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. the center-grounding pad shall also have a solder mask clearance. expansion of the pads to create solder mask clearance can be provided in the master data or reques ted from the pcb fabrication supplier. thermal pad and via design the pcb land pattern has been designed with a thermal pad th at matches the die paddle size on the bottom of the device. thermal vias are required in the pcb layout to effectively conduct heat away from the package. the via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. the via pattern used for the rfmd qualification is based on th ru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm pl ating on via walls. if micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. a = 0.74 x 0.38 (mm) typ. b = 0.38 x 0.74 (mm) typ. c = 1.60 (mm) sq. dimensions in mm. 1.50 typ. 0.50 typ. 0.50 typ. 0.55 typ. 0.55 typ. 0.75 typ. 0.75 typ. 1.50 typ. pin 16 pin 1 pin 12 pin 8 b b b b a a a a b b b b a a a a c figure 2. pcb solder mask pattern (top view)
19 of 19 RF5112 ds110617 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rohs compliant: yes package total weight in grams (g): 0.015 compliance date code: n/a bill of materials revision: - pb free category: e3 pb cd hg cr vi pbb pbde die 000000 molding compound 000000 lead frame 000000 die attach epoxy 000000 wire 000000 solder plating 000000 * directive 2002/95/ec of the european parliament and of the council of 27 january 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment rohs* banned material content bill of materials parts per million (ppm) this rohs banned material content declaration was prepared solely on information, including analytical data, provided to rfmd b y its suppliers, and applies to the bill of materials (bom) revision noted above.

▲Up To Search▲

Price & Availability of RF5112

	To Download RF5112 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .